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Updated: May 5, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Thomas Uehlinger1, Gregor Jotzu, Michael Messer
1Institute for Quantum Electronics, ETH Zurich, 8093 Zurich, Switzerland.
Researchers created artificial graphene using ultracold atoms to study transitions between metallic and insulating states. They observed suppressed double occupancy and a gapped spectrum in the Mott insulating regime, validating theoretical models.
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