High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers.

Area of Science:

• Materials Science
• Nanotechnology
• Electrical Engineering

Background:

• Organic bistable devices (OBDs) offer potential for next-generation electronics.
• Graphene oxide (GO) and polymethylmethacrylate (PMMA) are promising materials for device fabrication.

Purpose of the Study:

• To fabricate and characterize organic bistable devices (OBDs) using graphene oxide (GO) and polymethylmethacrylate (PMMA).
• To investigate the resistive switching mechanism and performance metrics for memory applications.

Main Methods:

• Fabrication of ITO/PMMA/GO/PMMA/Al sandwich structures.
• Electrical characterization using I-V measurements to determine device states and switching behavior.
• Evaluation of ON/OFF ratio, endurance, and data retention.

Main Results:

• Successfully fabricated OBDs exhibiting distinct low-conductivity (OFF) and high-conductivity (ON) states.
• Demonstrated electrical switching between states using negative and positive electrical sweeps.
• Achieved an ON/OFF ratio of approximately 5 x 10^3, reproducibility over 10^5 cycles, and a retention time of 10^4 s.

Conclusions:

• The resistive switching mechanism is attributed to the formation and rupture of conducting filaments within the device structure.
• The demonstrated performance metrics indicate significant promise for high-density, low-cost memory applications.
• Further development of these GO/PMMA based OBDs could lead to advanced electronic memory solutions.