Space electric field concentrated effect for Zr:SiO2 RRAM devices using porous SiO2 buffer layer

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Resistive random access memory (RRAM) devices based on Zr:SiO2 thin films are crucial for next-generation electronics.
• Improving the operational current and resistive switching characteristics of RRAM devices is an ongoing research challenge.

Purpose of the Study:

• To investigate the impact of a porous SiO2 buffer layer on Zr:SiO2 RRAM device performance.
• To understand the conduction mechanisms and electric field distribution within bilayer RRAM structures.

Main Methods:

• Fabrication and characterization of single-layer Zr:SiO2 and bilayer Zr:SiO2/porous SiO2 thin films.
• Analysis of resistive switching properties in low-resistance state (LRS) and high-resistance state (HRS).
• COMSOL Multiphysics simulation to model and verify the electric field concentration effect.

Main Results:

• A porous SiO2 buffer layer effectively concentrates the space electric field in Zr:SiO2 RRAM devices.
• The bilayer structure exhibits distinct resistive switching properties compared to single-layer devices.
• Space charge limited current (SCLC) conduction mechanism identified in both LRS and HRS for bilayer devices.

Conclusions:

• The space electric field concentration effect, facilitated by the porous SiO2 buffer layer, significantly enhances the operational current of Zr:SiO2 RRAM devices.
• The identified SCLC mechanism provides insight into the switching behavior of these advanced memory devices.
• Bilayer Zr:SiO2/porous SiO2 structures offer a promising pathway for developing high-performance RRAM.