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Experimental Methods for Trapping Ions Using Microfabricated Surface Ion Traps
Published on: August 17, 2017
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Carrier trapping and escape times in p-i-n GaInNAs MQW structures
1School of Computer Science and Electronic Engineering, University of Essex, CO4 3SQ Colchester, UK. hkhalia@essex.ac.uk.
Nanoscale Research Letters
|January 15, 2014
Abstract:
We used a semi-classical model to describe carrier capture into and thermionic escape from GaInNAs/GaAs multiple quantum wells (MQWs) situated within the intrinsic region of a GaAs p-i-n junction. The results are used to explain photocurrent oscillations with applied bias observed in these structures, in terms of charge accumulation and resonance tunnelling.
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