Ga0.35In0.65 N0.02As0.08/GaAs bidirectional light-emitting and light-absorbing heterojunction operating at 1.3 μm

Area of Science:

• Optoelectronics
• Semiconductor Physics

Background:

• The Top-Hat hot electron light emission and lasing in semiconductor heterostructure (THH-VCSOA) is a bidirectional heterojunction device.
• It features an intrinsic active region with multiple quantum wells (MQWs) and distributed Bragg reflectors (DBRs).

Purpose of the Study:

• To investigate the THH-VCSOA's capability for wavelength conversion with amplification.
• To explore the bidirectional light-emitting and light-absorbing properties of the device.

Main Methods:

• Fabrication of the THH-VCSOA using a four-contact configuration.
• Biasing the absorption and emission regions to achieve wavelength conversion and amplification.
• Reversing absorption and emission regions by altering applied voltage polarity.

Main Results:

• The device operates bidirectionally as a light-emitting and light-absorbing heterojunction.
• Achieved wavelength conversion with amplification at approximately 1,300 nm.
• Demonstrated a maximum gain of around 5 dB at 1,300 nm and 300 K.

Conclusions:

• The THH-VCSOA is a promising device for optical amplification and wavelength conversion applications.
• The device's bidirectional nature and tunable absorption/emission regions offer design flexibility.