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Updated: Jan 2, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Improvement in negative bias stress stability of solution-processed amorphous In-Ga-Zn-O thin-film transistors using
Jeong Moo Kwon1, Joohye Jung, You Seung Rim
1School of Electrical and Electronic Engineering, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, Korea.
Abstract:
We have investigated the effect of hydrogen peroxide (H2O2) on negative bias stress (NBS) stability of solution-processed amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The instability of solution-processed a-IGZO TFTs under NBS is attributed to intrinsic oxygen vacancy defects (Vo) and organic chemical-induced defects, such as pores, pin holes, and organic residues. In this respect, we added H2O2 into an indium-gallium-zinc oxide solution to reduce the defects without any degradation of electrical performance. The field-effect mobility and sub-threshold slope of the a-IGZO TFTs were improved from 0.37 cm(2) V(-1) s(-1) and 0.86 V/dec to 0.97 cm(2) V(-1) s(-1) and 0.58 V/dec, respectively. Furthermore, the threshold voltage shift under NBS was dramatically decreased from -3.73 to -0.18 V. These results suggest that H2O2 effectively reduces Vo through strong oxidation and minimizes organic chemical-induced defects by eliminating the organic chemicals at lower temperatures compared to a conventional solution process.
