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Performance of a silicon monochromator under high heat load
Aleksandr I Chumakov1, Ilya Sergeev2, Jean-Philippe Celse1
1European Synchrotron Radiation Facility, F-38043 Grenoble, France.
Abstract:
The performance of a cryogenically cooled double-crystal silicon monochromator was studied under high-heat-load conditions with total absorbed powers and power densities ranging from 8 to 780 W and from 8 to 240 W mm(-2), respectively. When the temperature of the first crystal is maintained close to the temperature of zero thermal expansion of silicon, the monochromator shows nearly ideal performance with a thermal slope error of 0.6 µrad. By tuning the size of the first slit, the regime of the ideal performance can be maintained over a wide range of heat loads, i.e. from power densities of 110 W mm(-2) (at total absorbed power of 510 W) to 240 W mm(-2) (at total absorbed power of 240 W).
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