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Updated: May 1, 2026
Polycrystalline Silicon Thin-film Solar cells with Plasmonic-enhanced Light-trapping
Published on: July 2, 2012
Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation
Fangda Yuan1, Zhengcao Li1, Tianci Zhang1
1Key Laboratory of Advanced Materials, School of Material Science and Engineering, Tsinghua University, Beijing 100084, China.
Abstract:
Large-area periodically aligned silicon nanopillar (PASiNP) arrays were fabricated by magnetic sputtering with glancing angle deposition (GLAD) on substrates coated by a monolayer of close-packed polystyrene (PS) nanospheres. The structure of PASiNP arrays could be manipulated by changing the diameter of PS nanospheres. Enhanced light absorptance within a wavelength range from 300 to 1,000 nm was observed as the diameter of nanopillars and porosity of PASiNP arrays increased. Meanwhile, Xe ion irradiation with dose from 1 × 10(14) to 50 × 10(14) ions/cm(2) was employed to modify the surface morphology and top structure of thin films, and the effect of the irradiation on the optical bandgap was discussed.
Pacs Code:
81.15.Cd; 78.66.Jg; 61.80.Jh.
