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Entropic barriers for two-dimensional quantum memories.

Benjamin J Brown1, Abbas Al-Shimary2, Jiannis K Pachos2

  • 1Quantum Optics and Laser Science, Blackett Laboratory, Imperial College London, Prince Consort Road, London SW7 2AZ, United Kingdom and School of Physics and Astronomy, University of Leeds, Leeds LS2 9JT, United Kingdom.

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This summary is machine-generated.

Researchers explored low-dimensional quantum memories, finding that defect lines can entropically suppress errors. This approach shows promise for stabilizing quantum information at finite temperatures.

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Area of Science:

  • Quantum Information Science
  • Condensed Matter Physics
  • Topological Quantum Computation

Background:

  • Topologically ordered systems typically lack energy barriers for stable quantum information at finite temperatures.
  • Low-dimensional quantum memories are experimentally accessible but face challenges with information stability.

Purpose of the Study:

  • To investigate methods for stabilizing quantum information in low-dimensional systems.
  • To explore the potential of defect lines in Kitaev's quantum double model for creating robust quantum memories.

Main Methods:

  • Introduction of a grid of defect lines into Kitaev's quantum double model.
  • Numerical simulations to analyze the energy landscape and excitation diffusion.
  • Investigation of the temperature and system size scaling of error suppression.

Main Results:

  • The defect line configuration creates a complex energy landscape that entropically suppresses error-causing excitations.
  • Numerical results demonstrate superexponential inverse temperature scaling and polynomial system size scaling for error suppression.
  • Observed that entropic effects diminish below a specific low temperature threshold.

Conclusions:

  • Entropic suppression of errors offers a novel pathway for enhancing quantum memory stability in low-dimensional systems.
  • The system's temperature bound for entropic effects can be modified, potentially extending stability to zero temperature.
  • This work motivates further research into defect-engineered topological quantum memory designs.