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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Graphene doping methods and device applications.

Jong Sik Oh, Kyong Nam Kim, Geun Young Yeom

    Journal of Nanoscience and Nanotechnology
    |April 23, 2014
    PubMed
    Summary

    Doping graphene enhances its electronic properties by addressing defects and band gap issues. This review focuses on post-treatment methods, including wet and dry techniques, to tailor graphene for advanced electronic applications.

    Area of Science:

    • Materials Science
    • Nanotechnology
    • Condensed Matter Physics

    Background:

    • Graphene shows promise for electronics, photovoltaics, and sensors.
    • Defects and lack of a band gap limit graphene's electronic applications.
    • Doping is crucial for tailoring graphene's electronic properties and reactivity.

    Purpose of the Study:

    • To review various graphene doping methods.
    • To discuss the device applications of doped graphene.
    • To focus on post-treatment doping techniques.

    Main Methods:

    • Categorization of doping into direct synthesis and post-treatment methods.
    • Classification of post-treatment into wet (acid, metal chloride, organic coating) and dry (electrostatic, evaporation, thermal, plasma) methods.

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  • Functionalization via dip-coating, spin coating, and other techniques.

    • Main Results:

    • Doping modifies graphene's electronic properties and chemical reactivity.
    • Wet doping methods achieve functionalization through charge transfer, creating p-type or n-type graphene with reduced sheet resistance.
    • Dry doping methods alter the Fermi energy level and functionalize graphene properties.

    Conclusions:

    • Doped graphene offers solutions to limitations of pristine graphene.
    • Various post-treatment methods effectively tune graphene's electronic characteristics.
    • Doped graphene has significant potential in diverse device applications.