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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
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Silicon nanowire field-effect-transistor based biosensors: from sensitive to ultra-sensitive
Mo-Yuan Shen1, Bor-Ran Li1, Yaw-Kuen Li1
1Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan.
Biosensors & Bioelectronics
|May 3, 2014
Summary
Silicon nanowire field-effect transistors (SiNW-FETs) offer sensitive, label-free biosensing. This review details organic immobilization methods and strategies to enhance SiNW-FET biosensor sensitivity for improved biological detection.
Area of Science:
- Nanotechnology
- Biotechnology
- Sensor Technology
Background:
- Silicon nanowire field-effect transistors (SiNW-FETs) are promising for biosensing.
- Existing literature focuses on applications, not conjugation and sensitivity enhancement.
Purpose of the Study:
- To summarize organic bio-receptor immobilization techniques for SiNW-FETs.
- To discuss strategies for improving SiNW-FET biosensor sensitivity.
Main Methods:
- Review of existing literature on SiNW-FET biosensors.
- Categorization of immobilization approaches.
- Analysis of sensitivity enhancement strategies.
Main Results:
- Identified various organic immobilization methods.
- Detailed five key strategies for sensitivity improvement: reducing non-specific binding, probe alignment, signal enhancement, novel architectures, and sub-threshold sensing.
Conclusions:
- Effective immobilization and sensitivity enhancement are crucial for SiNW-FET biosensor development.
- This review provides a comprehensive overview for researchers in the field.
