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Related Experiment Videos

Aberration-corrected STEM/TEM imaging at 15kV.

Takeo Sasaki1, Hidetaka Sawada1, Fumio Hosokawa1

  • 1EM Business Unit, JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan.

Ultramicroscopy
|May 21, 2014
PubMed
Summary
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This study demonstrates advanced aberration correction in low-voltage scanning transmission electron microscopy (S/TEM) at 15kV. The enhanced system achieves atomic resolution, crucial for nanoscale material analysis.

Area of Science:

  • Materials Science
  • Physics
  • Electron Microscopy

Background:

  • Aberrations in electron microscopy limit resolution.
  • Low-voltage microscopy offers advantages for sensitive materials.
  • Higher-order aberration correctors are essential for advanced imaging.

Purpose of the Study:

  • To evaluate aberration correction in a 15kV aberration-corrected scanning transmission electron microscope (S/TEM).
  • To achieve atomic resolution imaging at low accelerating voltages.
  • To assess the performance of a novel aberration measurement and auto-correction system.

Main Methods:

  • Utilized a cold-field emission gun and higher-order aberration corrector.
  • Employed diffractogram tableau method (TEM) and Ronchigram analysis (STEM) for aberration correction.
Keywords:
Aberration correctionLow-voltage electron microscopyScanning transmission electron microscopyTransmission electron microscopy

Related Experiment Videos

  • Performed aberration correction up to the fifth order.

    • Main Results:

    • Compensated aberrations up to 50mrad.
    • Achieved 0.192nm lattice fringes in TEM imaging of Si[110].
    • Observed 0.111nm resolution in TEM power spectrum and lattice fringes in STEM imaging.

    Conclusions:

    • The developed 15kV S/TEM achieves atomic resolution with minimal chromatic aberration.
    • Aberration correction up to fifth order is effective at low voltages.
    • This technology enables high-performance nanoscale imaging for materials research.