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Updated: Apr 28, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling
Byung-Hyun Lee1, Dong-Il Moon, HyunJae Jang
1The laboratory of Nano-Oriented Bio-Electronics Lab (NOBEL), Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, Korea. ykchoi@ee.kaist.ac.kr.
Abstract:
A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal-oxide-semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology.
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