Multi-spectral imaging with infrared sensitive organic light emitting diode

Area of Science:

• Optoelectronics
• Imaging Technology
• Materials Science

Background:

• Conventional near-infrared (IR) imagers utilize expensive III-V compound semiconductors and silicon-based readout integrated circuits (ROICs), increasing fabrication costs.
• III-V semiconductors lack sensitivity in the visible spectrum, limiting their use in multi-spectral (visible to near-IR) applications.
• Indium bump bonding for sensor integration further escalates the manufacturing expenses of existing IR imaging systems.

Purpose of the Study:

• To develop a cost-effective infrared (IR) imaging camera.
• To enable multi-spectral imaging capabilities spanning visible and near-IR wavelengths.
• To demonstrate a novel approach for IR image conversion and capture.

Main Methods:

• Integration of a commercially available digital single-lens reflex (DSLR) camera with an IR-sensitive organic light-emitting diode (IR-OLED).
• Direct conversion of IR images (1.2 µm wavelength) to visible light using the IR-OLED.
• Recording of converted visible images with a standard Si-CMOS DSLR camera.

Main Results:

• Successful demonstration of a low-cost IR imaging camera.
• The system effectively converts 1.2 µm IR images into visible light for capture.
• Achieved capability for multi-spectral imaging across visible and near-infrared regions.

Conclusions:

• The proposed IR-OLED and DSLR camera system offers a significantly lower-cost alternative to traditional IR imagers.
• This approach overcomes the spectral limitations of III-V semiconductors, enabling broader multi-spectral sensing.
• The developed system provides a viable platform for cost-effective visible to near-IR multi-spectral imaging.