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Related Concept Videos

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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MOSFET: Depletion Mode01:20

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An ionizing radiation sensor using a pre-programmed MAHAOS device.

Wen-Ching Hsieh1, Hao-Tien Daniel Lee2, Fuh-Cheng Jong3

  • 1Department of Opto-Electronic System Engineering, Minghsin University of Science and Technology, Xinxing Rd, 1, Xinfeng 30401, Taiwan. wchsieh@must.edu.tw.

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Summary
This summary is machine-generated.

Metal-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (MAHAOS) devices show promise for ionizing radiation sensing. Pre-programmed MAHAOS devices exhibit significant, stable responses to gamma radiation, indicating potential for non-volatile radiation detection.

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Area of Science:

  • Semiconductor device physics
  • Radiation detection technology
  • Materials science for electronic devices

Background:

  • Metal-aluminum oxide-hafnium aluminum oxide-silicon oxide-silicon (MAHAOS) devices, a type of SONOS-like structure with high-k gate dielectrics, are explored for ionizing radiation sensing.
  • Existing radiation sensors may have limitations in non-volatility or sensitivity.

Purpose of the Study:

  • To characterize the ionizing radiation sensing response of MAHAOS devices for the first time.
  • To evaluate the performance of both pre-programmed and virgin MAHAOS devices under gamma radiation exposure.
  • To assess the potential of these devices for non-volatile radiation sensing applications.

Main Methods:

  • Fabrication and characterization of MAHAOS devices with high-k stack gate dielectrics.
  • Exposure of devices to varying total ionization doses (TID) of gamma radiation.
  • Measurement of threshold voltage (V(T)) shifts as a function of radiation dose.
  • Evaluation of data retention stability for irradiated, pre-programmed devices.

Main Results:

  • A strong correlation was observed between the change in threshold voltage (V(T)) and the total ionization dose (TID) of gamma radiation up to at least 5 Mrad TID.
  • Pre-programmed MAHAOS devices demonstrated a highly significant change in V(T) upon gamma irradiation.
  • Irradiated pre-programmed MAHAOS devices (written by 5 Mrad TID) showed stable data storage over extended periods.

Conclusions:

  • MAHAOS devices are viable candidates for ionizing radiation sensor applications.
  • Pre-programmed MAHAOS devices offer a significant and stable response to gamma radiation.
  • These findings highlight the potential of MAHAOS devices for future non-volatile ionizing radiation sensing technologies.