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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Unipolar resistive switching of ZnO-single-wire memristors

Yong Huang1, Ying Luo2, Zihan Shen2

  • 1Institute of Optoelectronics & Nanomaterials (ION), School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China ; Department of Fundamental Courses, Jinling Institute of Technology, Nanjing 211169, China.

Nanoscale Research Letters
|August 23, 2014
PubMed

Keywords:
Electrical propertiesResistive random access memory (RRAM)Resistive switching (RS)ZnO

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