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Updated: Apr 25, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Single CuO(x) nanowire memristor: forming-free resistive switching behavior
Kai-De Liang1, Chi-Hsin Huang, Chih-Chung Lai
1Department of Materials Science & Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
Abstract:
CuOx nanowires were synthesized by a low-cost and large-scale electrochemical process with AAO membranes at room temperature and its resistive switching has been demonstrated. The switching characteristic exhibits forming-free and low electric-field switching operation due to coexistence of significant amount of defects and Cu nanocrystals in the partially oxidized nanowires. The detailed resistive switching characteristics of CuOx nanowire systems have been investigated and possible switching mechanisms are systematically proposed based on the microstructural and chemical analysis via transmission electron microscopy.
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