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Updated: Apr 23, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
An exchange-coupled donor molecule in silicon.
M F Gonzalez-Zalba1, André Saraiva, María J Calderón
1Cavendish Laboratory, University of Cambridge , J.J. Thomson Avenue, Cambridge CB3 0HE, U.K.
We demonstrate enhanced electron binding energies in silicon nanotransistors using isolated donor pairs. This finding is crucial for advancing quantum electronic devices and donor-based quantum computing.
Area of Science:
- Solid State Physics
- Quantum Computing
- Materials Science
Background:
- Understanding donor pairs in silicon is key for quantum technologies.
- Atomic orbital hybridization impacts electronic properties.
- Accurate modeling is needed for device optimization.
Purpose of the Study:
- To experimentally and theoretically investigate the energy spectrum and exchange coupling of isolated donor pairs in silicon nanotransistors.
- To explore the effects of molecular hybridization on electron binding and charging energies.
- To validate a theoretical model against experimental data.
Main Methods:
- Combined experimental and theoretical approach.
- Utilized a silicon nanotransistor platform.
- Employed a hydrogen molecule-like model with multivalley central-cell corrected effective mass theory and full configuration interaction for the 2-electron spectrum.
Main Results:
- Observed enhanced one- and two-electron binding energies and charging energy compared to single donors.
- Demonstrated molecular hybridization of atomic orbitals in the donor pair.
- Achieved excellent agreement between the theoretical model and experimental data for an arsenic diatomic molecule.
Conclusions:
- Isolated donor pairs in silicon nanotransistors exhibit enhanced binding energies due to molecular hybridization.
- The developed theoretical model accurately predicts the behavior of donor pairs.
- These findings support the development of advanced quantum electronic devices.
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