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Mechanisms of photoconductivity in atomically thin MoS2
Marco M Furchi1, Dmitry K Polyushkin, Andreas Pospischil
1Vienna University of Technology, Institute of Photonics , Gußhausstraße 27-29, 1040 Vienna, Austria.
Atomically thin molybdenum disulfide transistors show strong photogain through photovoltaic and photoconductive effects. These findings offer design strategies for sensitive photodetectors based on transition metal dichalcogenides.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Atomically thin transition metal dichalcogenides are promising for sensitive photodetection.
- Molybdenum disulfide (MoS2) is a key material in this field.
Purpose of the Study:
- Investigate the photoconductivity of mono- and bilayer molybdenum disulfide field-effect transistors.
- Identify and characterize photovoltaic and photoconductive effects in MoS2 photodetectors.
Main Methods:
- Fabrication and electrical characterization of biased MoS2 field-effect transistors.
- Measurement of photocurrent and photovoltage under varying optical power and gate voltage.
- Development of a model to explain observed phenomena.
Main Results:
- Observed both photovoltaic and photoconductive effects, both exhibiting significant photogain.
- Photovoltaic effect linked to charge transfer to surface molecules (e.g., water on SiO2).
- Photoconductive effect attributed to carrier trapping in MoS2 band tail states.
Conclusions:
- A model successfully reproduces experimental observations of MoS2 photodetectors.
- Findings provide design and engineering strategies for MoS2-based photodetectors.
- Results are potentially generalizable to other transition metal dichalcogenides.
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