Related Experiment Video
Updated: Apr 22, 2026

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Optical properties and band gap of single- and few-layer MoTe2 crystals
Claudia Ruppert1, Burak Aslan, Tony F Heinz
1Departments of Physics and Electrical Engineering, Columbia University , 538 West 120th Street , New York, New York 10027, United States.
Abstract:
Single- and few-layer crystals of exfoliated MoTe2 have been characterized spectroscopically by photoluminescence, Raman scattering, and optical absorption measurements. We find that MoTe2 in the monolayer limit displays strong photoluminescence. On the basis of complementary optical absorption results, we conclude that monolayer MoTe2 is a direct-gap semiconductor with an optical band gap of 1.10 eV. This new monolayer material extends the spectral range of atomically thin direct-gap materials from the visible to the near-infrared.
More Related Videos
11:24Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
08:50Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Related Concept Videos
Imperfections in Crystal Structure: Stoichiometric Point Defects
MO Theory and Covalent Bonding
Imperfections in Crystal Structure: Non-Stoichiometric Defects
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Imperfections in Crystal Structure: Point, Line and Plane Defects
Valence Bond Theory