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Published on: July 18, 2018
Synthesis and field emission studies of tower-like GaN nanowires
Yihe Liu1, Xianquan Meng1, Xiang Wan1
1Key Laboratory of Artificial Micro-and Nanostructures Ministry of Education and School of Physics and Technology, Wuhan University, Luojia Hill, Wuhan 430072, Hubei, People's Republic of China.
Abstract:
Tower-like GaN nanowires were successfully fabricated on Au-coated Si substrates by chemical vapor deposition. The tower-like nanowire consisted of a nanowire at the center and microcrystal layers stacked one by one around the nanowire. The tower-like nanowires grew along the [0001] direction, and the exposed surfaces of the microcrystal layers are [Formula: see text] and [Formula: see text] facets. The growth mechanism of the tower-like GaN nanowires was proposed. The field emission property of tower-like GaN nanowires was tested. Due to the sharp tips, nearly vertical alignment and rough surfaces caused by the microcrystal layers, the tower-like GaN nanowires show excellent performance in field emission with a turn-on field of 2.44 V/μm which is lower than those of other GaN one-dimensional (1D) nanomaterials.
Pacs:
81.15.Gh; 68.37.Lp; 68.37.Vj.
