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Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
Published on: February 10, 2014
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Design of an efficient charge-trapping layer with a built-in tunnel barrier for reliable organic-transistor memory
1School of Advanced Materials Engineering, Kookmin University, Seoul, 136-702, Korea.
Advanced Materials (Deerfield Beach, Fla.)
|December 6, 2014
Abstract:
A fully feasible and versatile way to fabricate highly reliable organic-transistor memory devices is made possible by a novel design of the charge-trappling layer. Gold@silica (core-shell)-structured nanoparticles are synthesized and used as the charge-trapping layer. Superior electrical reliability is obtained because the silica shell acts as a built-in tunnel potential barrier.
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