Enhanced photovoltaic property by forming p-i-n structures containing Si quantum dots/SiC multilayers
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Updated: Apr 19, 2026
Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
Yunqing Cao1, Peng Lu1, Xiaowei Zhang1
1National Laboratory of Solid State Microstructures and School of Electronic Science and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
Abstract:
Si quantum dots (Si QDs)/SiC multilayers were fabricated by annealing hydrogenated amorphous Si/SiC multilayers prepared in a plasma-enhanced chemical vapor deposition system. The thickness of amorphous Si layer was designed to be 4 nm, and the thickness of amorphous SiC layer was kept at 2 nm. Transmission electron microscopy observation revealed the formation of Si QDs after 900°C annealing. The optical properties of the Si QDs/SiC multilayers were studied, and the optical band gap deduced from the optical absorption coefficient result is 1.48 eV. Moreover, the p-i-n structure with n-a-Si/i-(Si QDs/SiC multilayers)/p-Si was fabricated, and the carrier transportation mechanism was investigated. The p-i-n structure was used in a solar cell device. The cell had the open circuit voltage of 532 mV and the power conversion efficiency (PCE) of 6.28%.
Pacs:
81.07.Ta; 78.67.Pt; 88.40.jj.
