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Ultrahigh Density Array of Vertically Aligned Small-molecular Organic Nanowires on Arbitrary Substrates
Published on: June 18, 2013
One-dimensional CuO nanowire: synthesis, electrical, and optoelectronic devices application
Lin-Bao Luo1, Xian-He Wang2, Chao Xie2
1School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, People's Republic of China ; Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, People's Republic of China.
We synthesized copper oxide nanowires (CuO NWs) using surface mechanical attrition treatment (SMAT) for nanodevices. These p-type CuO NWs show excellent sensitivity to visible light, making them ideal for flexible optoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Condensed Matter Physics
Background:
- One-dimensional nanostructures are crucial for advanced electronic and optoelectronic devices.
- Copper oxide (CuO) is a promising semiconductor material with potential applications in nanodevices.
- Developing efficient synthesis methods for high-quality CuO nanowires (NWs) is essential.
Purpose of the Study:
- To synthesize one-dimensional CuO NWs using a surface mechanical attrition treatment (SMAT)-assisted approach.
- To investigate the electrical properties and light sensitivity of individual CuO NWs.
- To explore the potential of CuO NWs in flexible optoelectronic devices.
Main Methods:
- Synthesis of CuO NWs via SMAT.
- Fabrication and characterization of nanofield-effect transistors (nanoFETs) using individual CuO NWs.
- First-principle calculations to understand electrical conduction mechanisms.
- Performance evaluation of CuO NW-based photodetectors under various conditions, including bending.
Main Results:
- SMAT yielded CuO NWs with diameters of 50–200 nm and lengths of 5–20 μm, oriented along the [110] direction.
- Individual CuO NWs exhibited p-type semiconducting behavior with high hole mobility (0.129 cm²V⁻¹s⁻¹) and concentration (1.34 × 10¹⁸ cm⁻³), attributed to oxygen vacancies.
- The CuO NW devices demonstrated high sensitivity to visible light (peak sensitivity at 600 nm) with excellent responsivity (2.0 × 10² A W⁻¹), conductive gain (3.95 × 10²), and detectivity (6.38 × 10¹¹ cm Hz¹/² W⁻¹).
- Nanophotodetectors fabricated on flexible PET substrates maintained good performance under bending, showing high reproducibility.
Conclusions:
- The SMAT-assisted synthesis provides a viable route to high-quality CuO NWs for nanodevices.
- The p-type conduction and excellent optoelectronic properties of CuO NWs make them suitable for high-performance applications.
- Flexible CuO NW-based photodetectors show promise for wearable and adaptable optoelectronic systems.
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