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Updated: Apr 19, 2026
Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Seamless stitching of graphene domains on polished copper (111) foil
Van Luan Nguyen1, Bong Gyu Shin, Dinh Loc Duong
1IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 440-746, Republic of Korea; Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon, 440-746, Republic of Korea.
Abstract:
Seamless stitching of graphene domains on polished copper (111) is proved clearly not only at atomic scale by scanning tunnelling microscopy (STM) and transmission electron micoscopy (TEM), but also at the macroscale by optical microscopy after UV-treatment. Using this concept of seamless stitching, synthesis of 6 cm × 3 cm monocrystalline graphene without grain boundaries on polished copper (111) foil is possible, which is only limited by the chamber size.
