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Electrical spin injection into high mobility 2D systems.

M Oltscher1, M Ciorga1, M Utz1

  • 1Experimentelle und Angewandte Physik, University of Regensburg, D-93040 Regensburg, Germany.

Physical Review Letters
|December 20, 2014
PubMed
Summary
This summary is machine-generated.

We achieved spin injection into a high-mobility 2D electron system using ferromagnetic contacts. The observed spin valve signal deviates from standard models, suggesting the need to consider ballistic transport effects.

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Area of Science:

  • Condensed matter physics
  • Spintronics
  • Semiconductor interfaces

Background:

  • Investigating spin injection is crucial for developing spintronic devices.
  • High-mobility 2D electron systems offer potential for efficient spin manipulation.
  • Ferromagnetic contacts are key for injecting spin-polarized currents.

Purpose of the Study:

  • To explore spin injection efficiency into a high-mobility 2D electron system.
  • To analyze the behavior of nonlocal spin valve signals.
  • To understand the limitations of current models in describing spin transport.

Main Methods:

  • Utilizing (Ga,Mn)As Esaki diodes as spin aligners for spin injection.
  • Confining a 2D electron system at an (Al,Ga)As/GaAs interface.
  • Measuring nonlocal spin valve signals under varying bias voltages.

Main Results:

  • A clear nonlocal spin valve signal was observed.
  • The signal exhibited non-monotonic dependence on applied bias voltage.
  • Standard spin drift-diffusion models failed to explain the signal magnitude, predicting unphysical spin polarization values exceeding 100%.

Conclusions:

  • The standard spin drift-diffusion model is insufficient for this system.
  • Spin injection and transport are strongly influenced by contact geometry and electron mean free path.
  • Ballistic transport effects in the 2D region beneath ferromagnetic contacts are essential for a complete understanding.