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Updated: Apr 19, 2026

Fabrication of Carbon Nanotube High-Frequency Nanoelectronic Biosensor for Sensing in High Ionic Strength Solutions
Published on: July 22, 2013
Carbon nanotube feedback-gate field-effect transistor: suppressing current leakage and increasing on/off ratio
Chenguang Qiu1, Zhiyong Zhang, Donglai Zhong
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
Abstract:
Field-effect transistors (FETs) based on moderate or large diameter carbon nanotubes (CNTs) usually suffer from ambipolar behavior, large off-state current and small current on/off ratio, which are highly undesirable for digital electronics. To overcome these problems, a feedback-gate (FBG) FET structure is designed and tested. This FBG FET differs from normal top-gate FET by an extra feedback-gate, which is connected directly to the drain electrode of the FET. It is demonstrated that a FBG FET based on a semiconducting CNT with a diameter of 1.5 nm may exhibit low off-state current of about 1 × 10(-13) A, high current on/off ratio of larger than 1 × 10(8), negligible drain-induced off-state leakage current, and good subthreshold swing of 75 mV/DEC even at large source-drain bias and room temperature. The FBG structure is promising for CNT FETs to meet the standard for low-static-power logic electronics applications, and could also be utilized for building FETs using other small band gap semiconductors to suppress leakage current.
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