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Air-pressure tunable depletion width, rectification behavior, and charge conduction in oxide nanotubes
Yahya Alivov1, Hans H Funke, Vivek Singh
1Department of Chemical and Biological Engineering, ‡Materials Science and Engineering, and §Renewable and Sustainable Energy Institute, University of Colorado , Boulder, Colorado, United States.
ACS Applied Materials & Interfaces
|January 17, 2015
Summary
Researchers discovered air-tunable rectifying behavior in titanium-dioxide nanotubes. Adjusting air pressure significantly altered the on/off ratio, enabling control over electronic properties.
Area of Science:
- Materials Science
- Nanotechnology
- Solid-State Physics
Background:
- Metal-oxide nanotubes offer large surface areas and tunable properties for optical and electronic devices.
- Titanium dioxide (TiO2) nanotubes are promising nanomaterials for various applications.
Purpose of the Study:
- To investigate the air-tunable rectifying behavior and charge conduction properties of hollow titanium-dioxide nanotubes.
- To understand the mechanism behind the observed electronic behavior in these nanotubes.
Main Methods:
- Fabrication of hollow titanium-dioxide nanotubes.
- Electrical characterization of the nanotubes under varying air pressures.
- Analysis of the Schottky-diode and metal-insulator-semiconductor (MIS) junction formation.
Main Results:
- Demonstrated air-tunable rectifying behavior in titanium-dioxide nanotubes.
- Achieved a significant variation in the rectification factor (on/off ratio) of 1-2 × 10(3) by changing air pressure from 2 mTorr to atmospheric pressure.
- Observed modulation of depletion width and two-dimensional (2D) charge conduction.
Conclusions:
- The air-tunable rectifying behavior is attributed to the modulation of the depletion width by water vapor adsorption.
- Formation of a metal-insulator-semiconductor (MIS) junction controls the 2D charge conduction in the nanotubes.
- Hollow titanium-dioxide nanotubes show potential for tunable electronic devices controlled by ambient air conditions.
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