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1/f noise in graphene nanopores
S J Heerema1, G F Schneider, M Rozemuller
1Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands.
Nanotechnology
|January 29, 2015
Summary
Graphene nanopores exhibit significantly higher 1/f noise than silicon nitride pores, hindering DNA sequencing applications. This noise may stem from mechanical fluctuations, decreasing with increased graphene layer thickness.
Area of Science:
- Nanotechnology
- Biosensing
- Materials Science
Background:
- Graphene nanopores offer unique properties for biosensing and DNA sequencing.
- Understanding noise in nanopore devices is crucial for signal resolution.
Purpose of the Study:
- Investigate low-frequency 1/f noise in graphene nanopores.
- Compare noise levels to silicon nitride nanopores.
- Identify the source of high noise in graphene nanopores.
Main Methods:
- Measured ionic current 1/f noise in graphene and silicon nitride nanopores.
- Varied pore diameter, salt concentration, and buffer pH.
- Compared noise in graphene and boron nitride (h-BN) with different layer thicknesses.
Main Results:
- Graphene nanopores show 1/f noise two orders of magnitude higher than silicon nitride.
- Graphene nanopore noise does not follow Hooge's relation and is independent of pH.
- Noise decreases with increasing layer thickness in graphene and h-BN materials.
Conclusions:
- High 1/f noise in graphene nanopores is a significant limitation for DNA sequencing.
- Mechanical fluctuations are suggested as the primary cause of high noise.
- Thicker graphene or h-BN layers may offer improved signal-to-noise ratios.
