Related Experiment Video
Updated: Apr 16, 2026
07:47
Use of Sacrificial Nanoparticles to Remove the Effects of Shot-noise in Contact Holes Fabricated by E-beam Lithography
Published on: February 12, 2017
7.7K
Beyond EUV lithography: a comparative study of efficient photoresists' performance
Nassir Mojarad1, Jens Gobrecht1, Yasin Ekinci1
1Laboratory for Micro- and Nanotechnology, Paul Scherrer Institute, 5232 Villigen, Switzerland.
Scientific Reports
|March 19, 2015
Summary
Beyond extreme ultraviolet (EUV) lithography, new beyond EUV (BEUV) wavelengths offer potential for sub-10-nm semiconductor patterning. Inorganic photoresists show promise for BEUV, while organic ones require significant adaptation.
Area of Science:
- Semiconductor manufacturing
- Advanced lithography techniques
- Materials science for microelectronics
Background:
- Extreme ultraviolet (EUV) lithography at 13.5 nm is crucial for sub-10-nm integrated circuit patterning.
- Beyond EUV (BEUV) lithography, utilizing shorter wavelengths (6.x nm), presents a potential solution for future semiconductor demands.
- Photoresist performance is critical for achieving high-resolution patterning in advanced lithography.
Purpose of the Study:
- To characterize and compare the resolution, line-edge roughness, and sensitivity of different photoresists at BEUV wavelengths.
- To evaluate the impact of higher energy photons (BEUV vs. EUV) on photoresist properties.
- To assess the suitability of various photoresist chemistries for future lithography nodes.
Main Methods:
- Interference lithography was employed to pattern photoresists at both BEUV and EUV wavelengths.
- Simultaneous characterization of resolution, line-edge roughness, and sensitivity was performed.
- Photoresist performance was analyzed using the Z-parameter criterion.
Main Results:
- Patterning beyond 22 nm resolution was demonstrated using interference lithography at BEUV wavelengths.
- Higher energy photons in BEUV were found to impact line-edge roughness and exposure latitude.
- Inorganic photoresists exhibited superior performance at BEUV compared to organic chemically-amplified photoresists, which require substantial modifications.
Conclusions:
- Photoresist performance at BEUV is highly dependent on its chemical composition.
- Inorganic photoresists are more suitable for BEUV applications in their current form.
- Significant adaptations are needed for organic photoresists to be viable for BEUV lithography, impacting future microelectronics development.
