Alumina surface recovery for the particle reduction

Area of Science:

• Materials Science
• Plasma Physics
• Semiconductor Manufacturing

Background:

• Inductively coupled plasma (ICP) processes are crucial in semiconductor manufacturing.
• Alumina surfaces in ICP reactors can generate particles, leading to wafer contamination.
• Aluminum hydroxide (Al(OH)3) byproduct formation is a primary source of particle generation.

Purpose of the Study:

• To develop a method for alumina surface regeneration in ICP.
• To significantly reduce particle generation during semiconductor processing.
• To investigate the chemical transformation of the alumina surface.

Main Methods:

• A seasoning process was implemented post-photoresist strip.
• The process involved high-temperature plasma with oxygen gas.
• Surface analysis was performed using X-ray Photoelectron Spectroscopy (XPS) and FT-IR.

Main Results:

• The seasoning process altered the alumina surface byproduct from Al(OH)3 to Al2O3.
• This transformation considerably reduced the total number of particles on the wafer.
• XPS and FT-IR confirmed the change in surface composition.

Conclusions:

• The developed seasoning process effectively regenerates alumina surfaces.
• Converting Al(OH)3 to Al2O3 is a viable strategy for particle reduction in ICP.
• This method enhances wafer yield and process reliability.