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Updated: Apr 12, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Fabrication and optical characterization of large scale membrane containing InP/AlGaInP quantum dots
H Niederbracht1, F Hargart, M Schwartz
1Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen, University of Stuttgart, Allmandring 3, 70569 Stuttgart, Germany.
Abstract:
Single-photon sources with a high extraction efficiency are a prerequisite for applications in quantum communication and quantum computation schemes. One promising approach is the fabrication of a quantum dot containing membrane structure in combination with a solid immersion lens and a metal mirror. We have fabricated an 80 nm thin semiconductor membrane with incorporated InP quantum dots in an AlGaInP double hetero barrier via complete substrate removal. In addition, a gold layer was deposited on one side of the membrane acting as a mirror. The optical characterization shows in detail that the unique properties of the quantum dots are preserved in the membrane structure.

