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MoS2 Heterojunctions by Thickness Modulation.

Mahmut Tosun1, Deyi Fu2, Sujay B Desai1

  • 11] Electrical Engineering and Computer Sciences, University of California, Berkeley, CA, 94720 [2] Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 [3] Berkeley Sensor and Actuator Center, University of California, Berkeley, CA, 94720.

Scientific Reports
|July 1, 2015
PubMed
Summary
This summary is machine-generated.

We demonstrate lateral heterojunctions in molybdenum disulfide (MoS2) by altering flake thickness. This creates a type-I heterojunction at the interface, enhancing photocurrent for novel optoelectronic devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Lateral heterojunctions are crucial for advanced electronic devices.
  • Molybdenum disulfide (MoS2) is a promising 2D material for optoelectronics.

Purpose of the Study:

  • To create and characterize lateral heterojunctions in MoS2 by thickness modulation.
  • To understand the band alignment and photocurrent response at these junctions.

Main Methods:

  • Kelvin probe force microscopy (KPFM) for surface potential mapping.
  • Scanning photocurrent microscopy (SPCM) for spatial photoresponse analysis.
  • Experimental and theoretical analysis of band offsets.

Main Results:

  • Successfully formed lateral heterojunctions in as-exfoliated MoS2 flakes.
  • Identified a type-I heterojunction at the monolayer-multilayer interface.
  • Observed peak photocurrent at the heterojunction interface, confirming its optoelectronic activity.

Conclusions:

  • Thickness modulation is an effective method for creating MoS2 lateral heterojunctions.
  • The type-I band alignment facilitates efficient charge separation and collection.
  • These findings have significant implications for designing next-generation MoS2-based optoelectronic devices.