Simulating Silicon Photomultiplier Response to Scintillation Light

Area of Science:

• Nuclear Instrumentation
• Photon Detection Technologies

Background:

• Silicon Photomultipliers (SiPMs) exhibit complex responses to optical signals, influenced by parameters like efficiency, crosstalk, and afterpulsing.
• These parameters are often dependent on operational factors such as overvoltage and temperature, complicating their use in scintillation detection.

Purpose of the Study:

• To develop a comprehensive Monte Carlo (MC) model for simulating SiPM response to scintillation light pulses.
• To incorporate previously unaddressed SiPM response aspects and accurately model the non-linear relationship between incident light and SiPM output.

Main Methods:

• A combined discrete-time, discrete-event Monte Carlo (MC) model was developed.
• Analytic expressions for single-photoelectron response and microcell voltage drop were derived and validated.
• The model accounts for time-varying overvoltage and its impact on SiPM parameters.

Main Results:

• The MC model accurately simulates SiPM response, incorporating variations with overvoltage and temperature.
• Validation against experimental measurements on SiPM-based scintillation detectors confirmed model accuracy.
• The model successfully predicted detector response to various scintillators.

Conclusions:

• The proposed MC model provides a robust tool for simulating SiPM behavior in scintillation detection.
• It enables accurate prediction of detector performance and analysis of SiPM parameter variations.
• This work advances the understanding and application of SiPMs in scientific research.