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Electric-Field Modulation of Damping Constant in a Ferromagnetic Semiconductor (Ga,Mn)As
Lin Chen1, Fumihiro Matsukura1,2,3, Hideo Ohno1,2,3
1WPI-Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan.
Abstract:
The modulation of the Gilbert damping constant α in (Ga,Mn)As by the application of an electric field is detected by ferromagnetic resonance measurements, where α increases with decreasing hole concentration. The smaller modulation of other magnetic parameters, such as magnetic anisotropy fields and Landé g factor, suggests that the modulation of α is governed by other effects rather than the spin-orbit coupling. Comparison of the conductivity dependence of α with that of the magnetization indicates that the magnetic disorder induced by carrier localization plays a major role in determining the magnitude of α in (Ga,Mn)As.
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