Studies on the Characteristics of Vertical Organic Transistor with Nano Patterned Gate Using Block Copolymer

In this study, we fabricated and studied the device characteristics of vertical organic transistors consisting of nano-patterned gates constructed from the self-assembly of block copolymer. The size of the gate opening made by the new method was 30~40 nm. The device was compared with those which had gate openings of 200 nm. These lager devices were constructed from monodispersed colloidal polystyrene spheres. The device which used block copolymer showed significant improvements in its on-off ratio. We also fabricated transistors with tungsten oxide buffer layer to increase the on current of the device. The devices were analyzed based on their current-voltage charac- teristics, impedance spectroscopy, atomic force microscope (AFM) images and scanning electron microscope (SEM) images.