Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Video

Updated: Mar 31, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

11.0K

Layer-by-Layer Assembled 2D Montmorillonite Dielectrics for Solution-Processed Electronics.

Jian Zhu1, Xiaolong Liu2, Michael L Geier1

  • 1Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208, USA.

Advanced Materials (Deerfield Beach, Fla.)
|October 31, 2015
PubMed
Summary

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Electrically Tunable Excitonic-Hyperbolicity in Chirality-Pure Carbon Nanotubes.

ACS nano·2026
Same author

Experimental demonstration of corrugated nanolaminate films as reflective light sails.

Nature communications·2026
Same author

An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications.

2d materials·2026
Same author

Highly radiative emission of room temperature-localized excitons enabled by charge-neutralized 0D quantum wells in 2D semiconductors.

Science advances·2026
Same author

Natural hyperbolicity of hexagonal boron nitride in the deep ultraviolet.

Nature communications·2026
Same author

Exciton-polariton photodiodes.

Nature communications·2026
Same journal

Enriching Magneto-Optical Functionalities in Iron Garnet Films via Compensation-Driven Magnetic Tuning.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Quartz-Like Supramolecular Glass Enabled by Host-Guest Size Mismatch.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Reliable and Reusable All-Solid-State Contact-Type Pre-Lithiation Platform for High-Performance All-Solid-State Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Cross-Scale Design of Electrocatalytic Systems for Steering Alcohol Oxidation Toward High-Value-Added Chemicals.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Synergistic Control of Radiative Decay and Exciton Splitting Dynamics for Efficient Organic Solar Cells Processed by Non-Halogenated Solvent.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Nitrogen-Incorporated Silicon Dioxide Interlayer Enables Pinhole-Reduced and Robust TOPCon With a High Implied Open-Circuit Voltage over 760 mV.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles
This summary is machine-generated.

Two-dimensional montmorillonite nanosheets form high-performance, solution-processed dielectrics. These thin films enable low-voltage operation in field-effect transistors, showcasing their potential for advanced electronics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics

Background:

  • Developing high-performance, solution-processed dielectric materials is crucial for advancing flexible and low-cost electronic devices.
  • Existing dielectric materials often face challenges in scalability, uniformity, and achieving desired electrical properties for low-voltage operation.

Purpose of the Study:

  • To investigate the potential of layer-by-layer assembled two-dimensional (2D) montmorillonite nanosheets as high-performance dielectric materials.
  • To evaluate the electrical characteristics and performance of these 2D nanosheet dielectrics in field-effect transistors (FETs).

Main Methods:

  • Fabrication of thin dielectric films using layer-by-layer assembly of 2D montmorillonite nanosheets.
  • Characterization of the thickness, uniformity, and dielectric properties of the assembled nanosheets.
Keywords:
2D dielectricsLBL assemblycapacitorsnanosheetstransistors

More Related Videos

Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K

Related Experiment Videos

Last Updated: Mar 31, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

11.0K
Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.8K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.7K
  • Integration of the dielectric layers into p-type single-walled carbon nanotube (SWCNT) and n-type indium gallium zinc oxide (IGZO) FETs.
  • Electrical testing of the fabricated FETs to determine capacitance, leakage current, and operating voltage.

    • Main Results:

    • Achieved scalable and spatially uniform dielectric films with thicknesses below 10 nm.
    • Demonstrated high areal capacitances of approximately 600 nF cm⁻².
    • Obtained low leakage currents as low as 6 × 10⁻⁹ A cm⁻².
    • Successfully enabled low-voltage operation in both SWCNT and IGZO FETs.

    Conclusions:

    • Layer-by-layer assembled 2D montmorillonite nanosheets represent a promising class of high-performance, solution-processed dielectric materials.
    • The demonstrated electrical properties facilitate the development of efficient, low-voltage electronic devices.
    • This approach offers a scalable and effective method for fabricating advanced dielectric layers for next-generation electronics.