Pattern matching approach to pseudosymmetry problems in electron backscatter diffraction

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
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Gert Nolze1, Aimo Winkelmann2, Alan P Boyle3

  • 1Dept 5.1, Federal Institute for Materials, Research and Testing (BAM), Unter den Eichen 87, 12205 Berlin, Germany.

Ultramicroscopy
|October 31, 2015
PubMed

Keywords:
Cross-correlationEBSDHough transformationOrientation precisionPattern simulationPseudosymmetryPyrite

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