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Sensitive Flexible Magnetic Sensors using Organic Transistors with Magnetic-Functionalized Suspended Gate Electrodes
Yaping Zang1,2, Fengjiao Zhang1,2, Dazhen Huang1,2
1Key Laboratory of Organic Solids, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
Abstract:
Utilizing a magnetic-functionalized suspended gate with combined features of outstanding conductivity, flexibility, and magnetic properties, flexible magnetic sensor based on an organic field-effect transistor (OFET), with a high sensitivity of 115.2% mT(-1) is demonstrated. Gate engineering enables the sensing devices to possess promising applications for flexible touchless switches and spatiallyresolved magnetic-imaging elements.
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