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Trilayer Tunnel Selectors for Memristor Memory Cells.
Byung Joon Choi1, Jiaming Zhang1, Kate Norris1
1Hewlett Packard Laboratories, Palo Alto, CA, 94304, USA.
Advanced Materials (Deerfield Beach, Fla.)
|November 20, 2015
Summary
Researchers developed a novel integrated memory cell using a mem-ristor and a crested barrier selector. This device exhibits repeatable switching behavior, high endurance, and low variability, crucial for advanced memory applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- The development of non-volatile memory technologies is critical for next-generation computing.
- Memristive devices offer promising characteristics for high-density memory and neuromorphic computing.
- Selectors are essential components for enabling high-density crossbar memory arrays by suppressing sneak-path currents.
Purpose of the Study:
- To present an integrated memory cell combining a mem-ristor with a novel trilayer crested barrier selector.
- To characterize the performance of the TaN1+x /Ta2 O5 /TaN1+x selector for memory applications.
- To demonstrate the repeatable nonlinear current-voltage switching behavior of the integrated memory cell.
Main Methods:
- Fabrication of the trilayer crested barrier selector using atomic-layer deposition (ALD).
- Integration of the selector with a mem-ristor device.
- Electrical characterization of the selector and the integrated memory cell, including current-voltage (I-V) measurements.
- Evaluation of key performance metrics such as nonlinearity, endurance, variability, and temperature dependence.
Main Results:
- The atomic-layer-deposited TaN1+x /Ta2 O5 /TaN1+x crested barrier selector demonstrated excellent performance.
- Achieved a large nonlinearity exceeding 10^4, indicating effective suppression of sneak-path currents.
- Exhibited high endurance exceeding 10^8 switching cycles, crucial for reliable memory operation.
- Showcased low variability in switching characteristics and low temperature dependence, ensuring device stability.
Conclusions:
- The integrated memory cell with a mem-ristor and a crested barrier selector offers a viable solution for high-performance memory applications.
- The trilayer crested barrier selector fabricated by ALD provides superior characteristics for enabling dense memory arrays.
- The demonstrated device performance highlights the potential of this architecture for future electronic systems.
