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Updated: Mar 28, 2026

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Characterization of Anodic Aluminum Oxide Membrane with Variation of Crystallizing Temperature for pH Sensor
Abstract:
We fabricated electrolyte-dielectric-metal (EDM) device incorporating a high-k Al2O3 sensing membrane from a porous anodic aluminum oxide (AAO) using a two step anodizing process for pH sensors. In order to change the properties of the AAO template, the crystallizing temperature was varied from 400 degrees C to 700 degrees C over 2 hours. The structural properties were observed by field emission scanning electron microscopy (FE-SEM). The pH sensitivity increased with an increase in the crystallizing temperature from 400 degrees C to 600 degrees C. However at 700 degrees C, deformation occurred. The porous AAO sensor with a crystallizing temperature of 600 degrees C displayed the good sensitivity and long-term stability and the values were 55.7 mV/pH and 0.16 mV/h, respectively.
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