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Leakage Current Mechanism of InN-Based Metal-Insulator-Semiconductor Structures with Al2O3 as Dielectric Layers

X Wang1, G Z Zhang1, Y Xu1

  • 1Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan, 430072, People's Republic of China.

Nanoscale Research Letters
|January 14, 2016
PubMed

Keywords:
Al2O3InNMIS

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