Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication

B Damilano1, S Vézian1, J Brault1

  • 1Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.

Nano Letters
|February 18, 2016
PubMed
Summary

Gallium nitride (GaN) selective area sublimation (SAS) creates 3D nanostructures. This method yields InGaN quantum disks with narrow, multi-line emission around 3 eV, useful for optoelectronics.

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