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Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
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Selective Area Sublimation: A Simple Top-down Route for GaN-Based Nanowire Fabrication
B Damilano1, S Vézian1, J Brault1
1Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications, Centre National de la Recherche Scientifique , Parc de Sophia Antipolis Rue B. Gregory, 06560 Valbonne, France.
Nano Letters
|February 18, 2016
Summary
Gallium nitride (GaN) selective area sublimation (SAS) creates 3D nanostructures. This method yields InGaN quantum disks with narrow, multi-line emission around 3 eV, useful for optoelectronics.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Gallium nitride (GaN)-based materials are crucial for optoelectronic devices.
- Fabricating three-dimensional (3D) nanostructures with controlled dimensions is challenging.
- Selective area epitaxy and etching techniques are key for nanostructure fabrication.
Purpose of the Study:
- To develop a top-down method for creating 3D GaN-based nanostructures.
- To investigate the formation and optical properties of InGaN quantum disks (QDisks).
- To explore the potential of GaN selective area sublimation (SAS) for nanostructure fabrication.
Main Methods:
- In situ partial silicon nitride (SiNx) masking of GaN-based epitaxial layers.
- High-temperature annealing for GaN selective area sublimation (SAS).
- GaN regrowth on InGaN/GaN nanowires (NWs).
- Low-temperature microphotoluminescence spectroscopy.
Main Results:
- Achieved selective area sublimation (SAS) of GaN and InGaN/GaN quantum well structures.
- Fabricated GaN nanowires (NWs) with nanometer-scale diameters.
- Formed 3D InGaN quantum disks (QDisks) after GaN regrowth.
- Observed multi-line photon emission from QDisks around 3 eV with narrow linewidths (1-2 meV).
Conclusions:
- GaN selective area sublimation (SAS) is an effective top-down approach for creating 3D nanostructures.
- The resulting InGaN QDisks exhibit distinct optical properties suitable for advanced optoelectronic applications.
- This technique offers precise control over nanostructure dimensions and optical characteristics.

