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MOS Capacitor01:25

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path

Assim Boukhayma1,2, Antoine Dupret3, Jean-Pierre Rostaing4

  • 1Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, Grenoble F-38054, France. assim.boukhayma@epfl.ch.

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Summary
This summary is machine-generated.

This study introduces a novel low-noise terahertz (THz) imager using complementary metal-oxide semiconductor (CMOS) technology. It achieves enhanced sensitivity through source modulation and in-pixel filtering for improved THz imaging applications.

Keywords:
CMOSGm-CN-pathbandpass filterhigh-Qinductorless filterlow noisesub-millimeter wave detectorssub-millimeter wave imagingterahertz direct detectionterahertz imagingtunable

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Area of Science:

  • Terahertz (THz) imaging
  • Semiconductor device physics
  • Integrated circuit design

Background:

  • Terahertz imaging requires sensitive detectors with low noise.
  • Existing THz imagers often face limitations in sensitivity and noise performance.
  • Complementary metal-oxide semiconductor (CMOS) technology offers a path for integrated and cost-effective THz imaging solutions.

Purpose of the Study:

  • To present the first low-noise CMOS THz imager utilizing source modulation and in-pixel high-Q filtering.
  • To demonstrate significant improvements in sensitivity and noise performance for THz imaging.
  • To provide a design analysis for the integrated filtering components.

Main Methods:

  • Development of a 31x31 focal plane array in a 0.13 μm standard CMOS process.
  • Integration of broadband bow tie antennas, NMOS detectors, low-noise amplifiers, and a hybrid high-Q filter (passive switched-capacitor N-path and Gm-C) in each pixel.
  • Implementation of active THz source modulation to enhance scene illumination and signal-to-noise ratio.

Main Results:

  • Achieved a high Q factor of 100 for the in-pixel filter, validated by analytical calculations and measurements.
  • Measured an input-referred noise of 0.2 μV RMS.
  • Demonstrated broadband operation with noise equivalent power as low as 0.6 nW at 270 GHz and 0.8 nW at 600 GHz.

Conclusions:

  • The developed CMOS THz imager represents a significant advancement in low-noise imaging technology.
  • Source modulation and in-pixel high-Q filtering are effective strategies for enhancing THz imager sensitivity.
  • The integrated design and performance metrics pave the way for practical THz imaging systems.