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Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation
Optics Letters
|March 16, 2016
Summary
We explored quantum dot lasers for photonic microwave generation. Adjusting frequency detuning tunes microwave frequency and enhances power, reducing distortion for a cleaner signal.
Area of Science:
- Semiconductor lasers
- Quantum dot optoelectronics
- Photonics
Background:
- Optically injected semiconductor lasers are explored for microwave signal generation.
- Quantum dot lasers offer unique properties for optoelectronic applications.
Purpose of the Study:
- Investigate the period-one dynamics of optically injected InAs/GaAs quantum dot lasers.
- Characterize their performance as photonic microwave sources.
Main Methods:
- Experimental analysis of period-one dynamics.
- Tuning frequency detuning and injection strength.
- Measuring microwave frequency, power, and harmonic distortion.
Main Results:
- Microwave frequency is continuously tunable via frequency detuning.
- Increased injection strength enhances microwave power away from Hopf bifurcation.
- Higher detuning frequency reduces second-harmonic distortion.
- Strong injection and high detuning favor single sideband optical signals.
- Low-sensitivity period-one oscillation points identified near Hopf bifurcation.
Conclusions:
- Optically injected quantum dot lasers are viable photonic microwave sources.
- Tunability and signal quality can be optimized through injection and detuning parameters.
- Understanding dynamics near Hopf bifurcation is crucial for stable operation.
