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Area of Science:

  • Optoelectronics
  • Integrated Circuits
  • Photonics

Background:

  • Optoelectronic receivers are crucial components in optical communication systems.
  • Existing receivers often face challenges with power consumption and sensitivity.
  • Monolithic integration offers a path to improved performance and reduced form factor.

Purpose of the Study:

  • To develop a monolithically integrated optoelectronic receiver with a low-capacitance on-chip photodiode.
  • To achieve high sensitivity and energy efficiency at high data rates.
  • To demonstrate the viability of an opto-CMOS process for advanced receiver design.

Main Methods:

  • Fabrication of the receiver using a 0.35 μm opto-CMOS process.
  • Integration of a low-capacitance p-i-n photodiode directly onto the chip.
  • Utilization of a regenerative latch as a sense amplifier for low power consumption.

Main Results:

  • The integrated receiver operates at microwatts (μW) power levels.
  • Achieved sensitivities of -26.0 dBm (635 nm) and -25.5 dBm (675 nm) at 400 Mbit/s (BER = 10⁻⁹).
  • Demonstrated exceptional energy efficiency of 2 pJ/bit.

Conclusions:

  • The developed optoelectronic receiver offers a significant advancement in performance and energy efficiency.
  • Monolithic integration in an opto-CMOS process is effective for creating high-performance receivers.
  • This technology holds promise for next-generation optical communication systems requiring low power and high speed.