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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Multi-Channel Gating Chip in 0.18 µm High-Voltage CMOS for Quantum Applications.

Christoph Ribisch1, Michael Hofbauer1, Seyed Saman Kohneh Poushi1

  • 1Institute of Electrodynamics, Microwave and Circuit Engineering, Faculty of Electrical Engineering and Information Technology, Technische Universität Wien, 1040 Vienna, Austria.

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This study presents a novel gating circuit for photonic quantum simulators, integrating single-photon avalanche diodes (SPADs) on a chip. The circuit demonstrates fast response times and high photon detection probability, crucial for quantum computing advancements.

Keywords:
CMOSSPADgating circuitquantum simulatorsingle-photon avalanche diode

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Area of Science:

  • Quantum computing
  • Integrated photonics
  • Semiconductor device physics

Background:

  • Photonic quantum simulators require precise control over photon detection.
  • Integrated single-photon avalanche diodes (SPADs) are key components for sensitive light detection.
  • Existing gating circuits may lack the speed and integration necessary for advanced quantum applications.

Purpose of the Study:

  • To introduce and characterize a novel monolithic gating circuit for photonic quantum simulators.
  • To evaluate the performance of integrated SPADs within the developed gating circuit.
  • To demonstrate the potential of the circuit for high-fidelity quantum information processing.

Main Methods:

  • Monolithic implementation of a nine-channel gating circuit using 0.18 µm high-voltage CMOS technology.
  • Integration of nine SPADs within an application-specific integrated circuit (ASIC).
  • Characterization of circuit parameters including rise/fall times, pulse width, detection threshold, and power consumption.

Main Results:

  • Achieved fast rise and fall times of 480 ps and 280 ps, with a minimum pulse width of 1.26 ns.
  • Enabled a low detection threshold for avalanche events (<100 mV) using a fast comparator.
  • Demonstrated a photon detection probability of ~50% at 9.9 V excess bias and 635 nm wavelength.
  • Total power consumption for nine channels is approximately 250 mW.

Conclusions:

  • The developed gating circuit offers high performance metrics suitable for photonic quantum simulation.
  • The integrated SPADs exhibit promising characteristics for quantum applications.
  • This ASIC-based solution advances the development of compact and efficient quantum computing hardware.