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Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions

Boris Romanyuk1, Victor Melnik2, Valentin Popov2

  • 1V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine. romb@isp.kiev.ua.

Nanoscale Research Letters
|May 29, 2016
PubMed

Keywords:
CarbonIon implantationOxygenP-n junctionSiliconThermal donor

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