High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane...

Area of Science:

• Materials Science
• Organic Electronics
• Polymer Chemistry

Background:

• Polysilsesquioxane (PSQ) is a polymer known for its low-temperature curability and compatibility with inexpensive plastic substrates.
• Organic thin-film transistors (TFTs) are crucial components in flexible and low-cost electronic applications.
• Developing efficient gate dielectric materials is key to advancing organic TFT performance.

Purpose of the Study:

• To investigate the potential of polysilsesquioxane (PSQ) as a gate dielectric layer for organic thin-film transistors (TFTs).
• To evaluate the performance of TFTs fabricated with PSQ gate dielectrics and TIPS-pentacene active layers.
• To demonstrate PSQ as a viable material for low-cost organic electronics.

Main Methods:

• Curing of PSQ gate dielectric layers using ultraviolet (UV) light irradiation at approximately 60 °C.
• Fabrication of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin-film transistors (TFTs) utilizing the cured PSQ dielectric.
• Characterization of the electrical performance, specifically hole mobility, of the fabricated TFTs.

Main Results:

• The fabricated TFTs exhibited a maximum hole mobility of 1.3 cm²V⁻¹s⁻¹ and an average hole mobility of 0.78 ± 0.3 cm²V⁻¹s⁻¹.
• The performance achieved with PSQ gate dielectrics is comparable to that of transistors using traditional thermally oxidized SiO₂ and single-crystalline TIPS-pentacene.
• Successful demonstration of PSQ as a functional gate dielectric in organic TFTs.

Conclusions:

• Polysilsesquioxane (PSQ) is a promising polymer gate dielectric material for the fabrication of high-performance organic TFTs.
• The low-temperature curing process of PSQ makes it suitable for integration with low-cost plastic substrates.
• PSQ offers a pathway towards more economical and efficient organic electronic devices.