Enhanced Haze Ratio on Glass by Novel Vapor Texturing Method

State-of-the-art optical trapping designs are required to enhance the light trapping capabilities of tandem thin film silicon solar cells. The wet etch process is used to texture the glass surface by dipping in diluted acidic solutions such as HNO3 (nitric acid) and HF (hydrofluoric acid). For vapor texturing, the vapor was generated by adding silicon to HF:HNO3 acidic solution. The anisotropic etching of vapor textured wafers resulted in an etching depth of about 2.78 μm with reduced reflectance of 5%. We achieved a high haze value of 74.6% at a 540 nm wavelength by increasing the etching time and HF concentration.